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Imec and EV Group demonstrate wafer-to-wafer hybrid bonding with 200nm interconnect pitch and record high overlay accuracy

Imec and EV Group demonstrate wafer-to-wafer hybrid bonding with 200nm interconnect pitch and record high overlay accuracy

요약

Through their continued collaboration, Imec and EV Group (EVG) are focusing on advancing the overlay performance required for advanced logic-to-logic and memory-to-logic tier stacking. Imec and EV Group (EVG) demonstrate a highly yielding wafer-to-wafer hybri…

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Through their continued collaboration, Imec and EV Group (EVG) are focusing on advancing the overlay performance required for advanced logic-to-logic and memory-to-logic tier stacking.

  • Imec and EV Group (EVG) demonstrate a highly yielding wafer-to-wafer hybrid bonding technology at 200nm Cu interconnect pad pitch with record high post-bonding alignment accuracy, obtained on a test vehicle with routable interconnects.
  • This achievement marks a milestone in enabling advanced logic-to-logic and memory-to-logic tier stacking that requires an extremely high level of interconnect density – as envisioned in imec's CMOS 2.0 scaling paradigm.
  • The breakthrough result was achieved by co-optimizing all critical elements of imec's wafer-to-wafer hybrid bonding process flow, and by leveraging EVG's most advanced wafer bonding equipment.

LEUVEN, Belgium, May 28, 2026 /PRNewswire/ -- This week, at the 2026 IEEE Electronic Components and Technology Conference (ECTC), imec, a world-leading research and innovation hub in advanced semiconductor technologies, and EV Group (EVG), leading provider of semiconductor manufacturing equipment and process solutions, present a robust and highly yielding wafer-to-wafer hybrid bonding technology at 200nm Cu interconnect pad pitch, demonstrated on a test vehicle with routable interconnects. In addition, a record high Cu pad alignment accuracy was achieved, leveraging EVG's most advanced wafer bonding equipment. Imec and EVG intend to further advance the wafer-to-wafer hybrid bonding roadmap, in support of logic-to-logic and memory-to-logic tier stacking use cases that require an extremely high level of interconnect density – as envisioned in imec's CMOS 2.0 scaling paradigm.

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Example of a possible partitioning of a SoC following imec’s CMOS 2.0 scaling paradigm. (credit: imec)
Example of a possible partitioning of a SoC following imec’s CMOS 2.0 scaling paradigm. (credit: imec)
TEM of Daisy chain structures on a 200nm hexagonal pad grid with equal hybrid pad size and 25% designed Cu density. (credit: imec/IEEE)
TEM of Daisy chain structures on a 200nm hexagonal pad grid with equal hybrid pad size and 25% designed Cu density. (credit: imec/IEEE)
Actual wafer-to-wafer bond alignment improvement obtained on electrical device wafers. Results are shown with and without applying hybrid pad lithography pre-bonding corrections. (credit: imec/IEEE)
Actual wafer-to-wafer bond alignment improvement obtained on electrical device wafers. Results are shown with and without applying hybrid pad lithography pre-bonding corrections. (credit: imec/IEEE)
Cumulative plot of the measured resistance per link for equal pad size structures with 25% Cu density. (credit: imec/IEEE)
Cumulative plot of the measured resistance per link for equal pad size structures with 25% Cu density. (credit: imec/IEEE)
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