Near-infrared photovoltaic gating enables polarity-reconfigurable WSe2 phototransistors for in-sensor computing

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요약

Nanoscale, 2026, Accepted ManuscriptDOI: 10.1039/D6NR00412A, PaperXueling Lu, Yangyang Lv, Haifeng Wu, Jiali Yi, Guangcheng Wu, Huawei Liu, Zhaoqian Wang, Qijun Zong, Qin Shuai, Lulu Huang, Huanghua Xu, Xinjian Li, Di Wu, Xiaoli Zhu, Dong Li, Anlian PanNeurom…

본문

Near-infrared photovoltaic gating enables polarity-reconfigurable WSe2 phototransistors for in-sensor computing

Abstract

Neuromorphic in-sensor computing requires scalable, energy-efficient optoelectronic devices with reconfigurable functionality, yet most retinomorphic platforms rely on complex van der Waals stacking and remain largely restricted to the visible spectrum. Here we demonstrate a simple substrate-engineered near-infrared (NIR) reconfigurable phototransistor by integrating an ambipolar few-layer WSe2 channel with a Si PN junction substrate through a 10-nm HfO2 dielectric. Under 980-nm illumination, the Si PN junction generates a photovoltaic potential that is capacitively coupled to the WSe2 channel as an effective photogating voltage, inducing a pronounced threshold-voltage shift and enabling gate-programmable switching between negative (NPC) and positive photoconductance (PPC). The device achieves responsivities of 62.3 A W-1 (PPC) and −14.5 A W-1 (NPC), microsecond-level response times, and 13 distinguishable programmable states. By mapping PPC, NPC and zero photoconductance (ZPC) states to positive, negative and zero convolution weights, the device enables in-sensor convolution for image preprocessing such as edge extraction, offering a scalable route toward NIR-capable neuromorphic vision hardware.